Neeraj Tripathi - Concepedia

Author

Neeraj Tripathi

University at Albany, State University of New York ORCID

Also Known As

, N. Tripathi, Neeraj Kumar Tripathi, Neeraj Tripathi, Tripathi, N.

Publications

643

Citations

H-Index

Concepts

All Affiliations

University at Albany, State University of New York GlobalFoundries (United States)GlobalFoundries (Germany)IBM (United States)

About

Neeraj Tripathi is an author at University at Albany, State University of New York specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	531
2	Applied Physics	9	9	435
3	Electrical Engineering	9	9	446
4	Computer Engineering	3	3	193
5	Chemistry	1	1	75

Neeraj Tripathi

Publications

531

Citations

H-Index

Page 1

	Year	Citations
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels Ruijie Xie, P. Montanini, Kerem Akarvardar, EngineeringElectron-beam LithographyFinfet TechnologyMechanical EngineeringWafer Scale Processing	2016	139
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI Kwangyou Seo, Bala Haran, Divya Gupta, EngineeringVlsi DesignFinfet TechnologyIntegrated CircuitsWafer Scale Processing	2014	97
A Tersoff‐based interatomic potential for wurtzite AlN Mihir Tungare, Yunfeng Shi, Neeraj Tripathi, physica status solidi (a) Materials ScienceInorganic ChemistryWurtzite AlnAluminium NitrideEngineering	2011	75
FINFET technology featuring high mobility SiGe channel for 10nm and beyond Dechao Guo, G. Karve, Gen Tsutsui, EngineeringVlsi DesignDevice IntegrationFinfet TechnologyIntegrated Circuits	2016	64
Optimal assignment of high threshold voltage for synthesizing dual threshold CMOS circuits Neeraj Tripathi, A. Bhosle, Debasis Samanta, Low-power ElectronicsHardware SecurityElectrical EngineeringEngineeringVlsi Design	2002	32
Mechanism of large area dislocation defect reduction in GaN layers on AlN∕Si (111) by substrate engineering Muhammad Jamil, James Grandusky, V. K. Jindal, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEdge Dislocations	2007	31
Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs A. Paul, A. Bryant, Terence B. Hook, Sub XmlnsEngineeringIntegrated CircuitsMulti-fin Soi FinfetsSilicon On Insulator	2013	28
Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers James Grandusky, V. K. Jindal, Neeraj Tripathi, Journal of Crystal Growth Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringSubsurface Damage	2007	20
Effect of n+GaN cap polarization field on Cs-free GaN photocathode characteristics Neeraj Tripathi, Lauren Bell, Shouleh Nikzad, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringSi DeltaEngineeringPhysics	2010	18
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, Journal of materials research/Pratt's guide to venture capital sources Wide-bandgap SemiconductorElectrical EngineeringEngineeringCarbon ImpuritiesApplied Physics	2011	17

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