Puneet Suvarna - Concepedia

Author

Puneet Suvarna

University at Albany, State University of New York

Also Known As

, P Suvarna, P. Suvarna, Puneet H. Suvarna, Puneet Suvarna

Publications

340

Citations

H-Index

Concepts

All Affiliations

University at Albany, State University of New York DEVCOM Army Research Laboratory Avinashilingam University Meenakshi Academy of Higher Education and Research Kyma Technologies (United States)

About

Puneet Suvarna is an author at University at Albany, State University of New York specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	253
2	Applied Physics	9	9	205
3	Electrical Engineering	7	7	123
4	Chemistry	2	2	103
5	Biomedical Engineering	1	1	16

Puneet Suvarna

Publications

253

Citations

H-Index

Page 1

	Year	Citations
A Tersoff‐based interatomic potential for wurtzite AlN Mihir Tungare, Yunfeng Shi, Neeraj Tripathi, physica status solidi (a) Materials ScienceInorganic ChemistryWurtzite AlnAluminium NitrideEngineering	2011	75
Cutting-edge applications of oleic acid-modified CdSiO3: Ce3+ phosphors: Artificial intelligence enhanced latent fingerprint detection, anti-counterfeiting and optical thermometry N. Navya, B.R. Radha Krushana, S.C. Sharma, Materials Research Bulletin Materials ScienceArtificial IntelligenceEngineeringBiometricsCe3+ Phosphors	2024	28
Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage John Bulmer, Puneet Suvarna, Jeff Leathersich, IEEE Photonics Technology Letters Wide-bandgap SemiconductorEngineeringSemiconductor DeviceNanoelectronicsElectronic Engineering	2015	23
Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates Puneet Suvarna, Mihir Tungare, Jeffrey M. Leathersich, Journal of Electronic Materials Materials ScienceElectrical EngineeringSolid-state LightingEngineeringSapphire Substrates	2013	20
Development of highly thermal-stable blue emitting Y4Al2O9:Bi3+ phosphors for w-LEDs, fingerprint and data security applications R. Arunakumar, B.R. Radha Krushna, G. Ramakrishna, Materials Science and Engineering B Electrical EngineeringBi3+ PhosphorsData Security ApplicationsEngineeringSolid-state Lighting	2024	18
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, Journal of materials research/Pratt's guide to venture capital sources Wide-bandgap SemiconductorElectrical EngineeringEngineeringCarbon ImpuritiesApplied Physics	2011	17
Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance Puneet Suvarna, John Bulmer, Jeffrey M. Leathersich, IEEE Photonics Technology Letters Wide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineeringContact-edge Termination Technique	2014	16
HVPE GaN for high power electronic Schottky diodes Randy P. Tompkins, Timothy A. Walsh, Michael A. Derenge, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsPower Semiconductor DeviceGan Power Device	2012	15
Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations Jeff Leathersich, Puneet Suvarna, Mihir Tungare, Surface Science Materials ScienceAluminium NitrideEngineeringPhysicsCrystal Material	2013	15
GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates Randy P. Tompkins, J. Smith, K. W. Kirchner, Journal of Electronic Materials Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringDrift Layers GrownEngineering	2014	14

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