Concepedia

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 &#x00B0;C

Rongming Chu, David F. Brown, Daniel Zehnder, Xu Chen, Adam Williams, Ray Li, Mary Chen, S. Newell, K. S. Boutros

2012 · 16 citations · 2 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationField-effect TransistorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsGate Oxide LeakageLeakageMetal-semiconductor Field-effect TransistorsSilicon-on-insulator TechnologyThreshold VoltageThreshold Voltage Extraction

Abstract

We report a GaN-on-Si metal-insulator-semiconductor field-effect transistor (MISFET) with normally-off operation and 600-V blocking capability at 200 °C temperature. The temperature-dependences of threshold voltage, on-resistance, and leakage characteristics are discussed.

References

2

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Rongming Chu, A. Corrion, M Chen et al. · IEEE Electron Device Letters · 2011 · 353 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

P. Kordoš, D. Donoval, M. Florovič et al. · Applied Physics Letters · 2008 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 &amp;#x00B0;C

Concepts

Abstract

References

Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200 °C