M. Florovič

Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis

P. Kordoš, D. Donoval, M. Florovič et al. · Applied Physics Letters · 2008 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs

D. Donoval, M. Florovic̆, D. Gregušová et al. · Microelectronics Reliability · 2008 · 25 citations

Engineering, Materials Engineering, Materials Science +14

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Wojciech Dawidowski, B. Ściana, K. Bielak et al. · Energies · 2021 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Aleš Chvála, Róbert Szobolovszký, Jaroslav Kováč et al. · Journal of Electronic Packaging · 2019 · 15 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

M. Florovič, Róbert Szobolovszký, Jaroslav Kováč et al. · Semiconductor Science and Technology · 2019 · 12 citations

Engineering, Electrical Engineering, Materials Engineering +17