Daniel Zehnder

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Rongming Chu, A. Corrion, M Chen et al. · IEEE Electron Device Letters · 2011 · 348 citations

Semiconductor Technology, Semiconductor Devices, Electrical Engineering +9

An Experimental Demonstration of GaN CMOS Technology

Rongming Chu, Yu Cao, Mary Chen et al. · IEEE Electron Device Letters · 2016 · 166 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +12

Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

J. S. Moon, Daniel J. Curtis, Daniel Zehnder et al. · IEEE Electron Device Letters · 2011 · 93 citations

Graphene Nanomeshes, Electrical Engineering, Graphene-based Nano-antennas +11

GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz

B. Hughes, James Lazar, S.D. Hulsey et al. · 2012 · 64 citations

Power Switches, Electrical Engineering, Semiconductor Device +14

Normally-off 5A/1100V GaN-on-silicon device for high voltage applications

K. S. Boutros, Shawn D. Burnham, D. Wong et al. · 2009 · 38 citations

Electrical Engineering, Engineering, High Voltage Applications +9