B. Hughes

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Rongming Chu, A. Corrion, M Chen et al. · IEEE Electron Device Letters · 2011 · 348 citations

Semiconductor Technology, Semiconductor Devices, Electrical Engineering +9

Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs

P.J. Tasker, B. Hughes · IEEE Electron Device Letters · 1989 · 218 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +10

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Yu Cao, Rongming Chu, R. Li et al. · Applied Physics Letters · 2016 · 134 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Chemical Engineering +9

Passive Millimeter-Wave Imaging Module With Preamplified Zero-Bias Detection

J.J. Lynch, H. P. Moyer, James H. Schaffner et al. · IEEE Transactions on Microwave Theory and Techniques · 2008 · 125 citations

Engineering, Radio Frequency, Measurement +19

Bias dependence of the MODFET intrinsic model elements values at microwave frequencies

B. Hughes, P.J. Tasker · IEEE Transactions on Electron Devices · 1989 · 107 citations

Engineering, Radio Frequency, Bias Dependence +18