Oxynitride gate dielectrics for p/sup +/-polysilicon gate MOS devices

Abstract

Different oxynitride gate dielectrics (NH/sub 3/-nitrided, reoxidized NH/sub 3/-nitrided, N/sub 2/-annealed NH/sub 3/-nitrided, and N/sub 2/O grown oxides) are investigated for use in p/sup +/-polysilicon gate MOS devices. The comparison is based on flatband voltage shift as well as decrease in inversion capacitance. Results show that NH/sub 3/-nitrided and N/sub 2/-annealed NH/sub 3/-nitrided oxides best suppress the boron penetration and, consequently, these two undesirable effects. These findings are explained on the basis of the distribution of nitrogen in various oxynitride dielectrics.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>