Flatband Voltage
Flatband Voltage is the gate voltage applied to a MOS capacitor that eliminates band bending in the semiconductor, thereby restoring the energy bands to a flat condition relative to the Fermi level in the absence of external bias.
556
Publications
27.2K
Citations
1.9K
Authors
429
Institutions
Publications per year
2017–2026
33
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429
The University of Texas at Austin
Austin, United States
18 h-index
92 publications
3.1K citations
The University of Tokyo
Tokyo, Japan
15 h-index
44 publications
2.4K citations

Hanyang University
Seoul, South Korea
14 h-index
72 publications
2.7K citations
National Tsing Hua University
Hsinchu, Taiwan
13 h-index
77 publications
1.9K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
12 h-index
55 publications
1.7K citations

Centre National de la Recherche Scientifique
Paris, France
11 h-index
46 publications
774 citations
North Carolina State University
Raleigh, United States
11 h-index
42 publications
1.7K citations
The University of Osaka
Osaka, Japan
11 h-index
34 publications
1.4K citations
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JES · 124 publications · 7.3K citations
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131 publications · 5.2K citations
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77 publications · 3K citations
30
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18 publications · 640 citations
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JJAP · 16 publications · 435 citations
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