Flatband Voltage

Flatband Voltage is the gate voltage applied to a MOS capacitor that eliminates band bending in the semiconductor, thereby restoring the energy bands to a flat condition relative to the Fermi level in the absence of external bias.

556

Publications

27.2K

Citations

1.9K

Authors

429

Institutions

Publications per year

2017–2026

33

Variants

Vfb

Authors

1.9K

  1. TN
    Toshihide Nabatame

    National Institute for Materials Science, Japan

    10 publications · 371 citations

    10

    h-index

  2. KK
    Koji Kita

    The University of Tokyo, Japan

    8 publications · 387 citations

    8

    h-index

  3. HW
    Heiji Watanabe

    The University of Osaka, Japan

    8 publications · 247 citations

    8

    h-index

  4. AT
    Akira Toriumi

    The University of Tokyo, Japan

    8 publications · 545 citations

    8

    h-index

  5. AJ
    Allen J. Bard

    The University of Texas at Austin, United States

    7 publications · 362 citations

    7

    h-index

1–5 of 1.9K

Venues

  1. Journal of The Electrochemical Society

    JES · 124 publications · 7.3K citations

    43

    h-index

  2. Applied Physics Letters

    131 publications · 5.2K citations

    41

    h-index

  3. Journal of Applied Physics

    77 publications · 3K citations

    30

    h-index

  4. IEEE Electron Device Letters

    18 publications · 640 citations

    16

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 16 publications · 435 citations

    14

    h-index

1–5