2002 · 10 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsAnalytical ModelsChannel Doping EffectsChannel EffectFigure Of Merit EnhancementGate Delay ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingMetal-oxide-semiconductor Field-effect Transistor Small-signal ModelsMosfet Modeling
This work presents a comparative study of advanced MOSFET structures that have been proposed for around 0.1 /spl mu/m generation in the subjects of short-channel effect, drain saturation current, and relative gate delay. Our approach differs from other studies in that we emphasize compact analytical models and parametric comparison. These heuristic and analytic models are guided by experimental and simulational data. Based on these models, key device design parameters are extracted and compared. This approach provides good insight for device design, quick figure-of-merit, and a framework for analyzing a wide variety of MOSFETs. The devices in this study are : (a) uniformly-doped MOSFET, (b) delta-doped MOSFET, (c) pocket-implanted MOSFET, (d) SOI MOSFET, and (e) double-gated MOSFET. Their generic extensions cover almost every advanced MOSFET.
4
Threshold voltage model for deep-submicrometer MOSFETs
zhenglin liu, Chenming Hu, Jiawei Huang et al. · IEEE Transactions on Electron Devices · 1993 · 480 citations
Engineering, Electrical Engineering, Electronic Materials +16