K. Noda - Concepedia

Author

K. Noda

Japan Atomic Energy Agency

Also Known As

K Noda, K. NODA, K. Noda, KENJI NODA, Kazhuhiko Noda, Kenji NODA, Kenji Noda, Noda, K.

208

Publications

Citations

H-Index

141

Concepts

All Affiliations

Japan Atomic Energy Agency Nagoya University NEC (Japan)Kyushu University University of California, Berkeley

About

K. Noda is an author at Japan Atomic Energy Agency specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	72	2.4K
2	Applied Physics	16	24	599
3	Natural Sciences	7	7	215
4	Education	2	2	26
5	Health Sciences	1	1	25

K. Noda

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
A comparative study of advanced MOSFET concepts C. Wann, K. Noda, Tetsu Tanaka, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringDifferent Mosfet StructuresEngineeringVlsi Design	1996	236
Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's Bin Yu, C. Wann, E.D. Nowak, IEEE Transactions on Electron Devices Device ModelingPocket ImplantElectrical EngineeringLdd MosfetEngineering	1997	178
Asymmetric Aziridination by Using Optically Active (Salen)manganese(III) Complexes K. Noda, Naoki Hosoya, Ryo Irie, Synlett Inorganic ChemistryChemical EngineeringModerate LevelEngineeringPhotochemistry	1993	114
Ceramic breeder materials: Status and needs Carl E. Johnson, K. Noda, Nicole Roux Journal of Nuclear Materials Materials ScienceMaterials EngineeringTraditional CeramicEngineeringCeramics	1998	104
Catalytic asymmetric oxidation of sulfides using (salen)manganese(III) complex as a catalyst K. Noda, Naoki Hosoya, Ryo Irie, Tetrahedron Materials ScienceInorganic ChemistryChemical EngineeringEngineeringHeterogeneous Catalysis	1994	102
A 0.1-μm delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy K. Noda, T. Tatsumi, T. Uchida, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsApplied Physics	1998	67
A 16-Mb 400-MHz loadless CMOS four-transistor SRAM macro Koichi Takeda, Y. Aimoto, N. Nakamura, IEEE Journal of Solid-State Circuits Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignVlsi Architecture	2000	66
Asymmetric oxidation of sulfides using (salen)manganese(III) complex as a catalyst K. Noda, Naoki Hosoya, Koichi Yanai, Tetrahedron Letters Materials ScienceInorganic ChemistryChemical EngineeringEngineeringAsymmetric Oxidation	1994	65
Tritium release behavior from neutron-irradiated Li2TiO3 single crystal Takaaki Tanifuji, Daiju Yamaki, Shōichi Nasu, Journal of Nuclear Materials Materials ScienceNuclear CeramicEngineeringNuclear PhysicsNuclear Fission	1998	61
Properties and performance of tritium breeding ceramics Nicole Roux, Carl E. Johnson, K. Noda Journal of Nuclear Materials Materials ScienceMaterials EngineeringEngineeringCeramicsCeramics Materials	1992	59

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