IEEE Transactions on Electron Devices · 2008 · 86 citations · 14 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsAnalytical ModelsGate Oxide InterfacesGate Oxide Thickness EffectsGate-dependent Current-voltage BehaviorMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingSubthreshold ConductionWork Function
In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate material work function, and gate voltage. A model for the subthreshold behavior of three-terminal DG MOSFETs is also presented. The results of the models show excellent match with simulations using MEDICI. The analytical models provide physical insight which is helpful for device design.
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