Subthreshold Conduction
Subthreshold Conduction is a charge transport phenomenon in Metal-Oxide-Semiconductor Field-Effect Transistors wherein a weak inversion current flows between the source and drain terminals below the threshold gate voltage, sustained by thermal generation of carriers in the depletion region despite the absence of a strong inversion layer.
218
Publications
8.7K
Citations
758
Authors
247
Institutions
Publications per year
2017–2026
31
Variants
Weak Inversion Conduction
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IBM (United States)
Armonk, United States
8 h-index
19 publications
806 citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
8 h-index
23 publications
633 citations

Banaras Hindu University
Varanasi, India
6 h-index
21 publications
404 citations

University of Delhi
New Delhi, India
5 h-index
13 publications
349 citations
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Paris, France
5 h-index
9 publications
189 citations
Texas Instruments (United States)
Dallas, United States
5 h-index
13 publications
519 citations
CEA Grenoble
Grenoble, France
5 h-index
9 publications
189 citations
University of Batna 1
Batna City, Algeria
4 h-index
12 publications
495 citations
1–8 of 247
40 publications · 1.9K citations
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26 publications · 989 citations
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18 publications · 1K citations
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9 publications · 229 citations
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