IEEE Electron Device Letters · 1993 · 20 citations · 11 references
Electrical EngineeringEngineeringStress-induced Leakage CurrentElectronic MemorySoi MosfetApplied PhysicsBias Temperature InstabilityFlash MemorySingle Event EffectsHot-hole InjectionHot HolesMemory DevicesSemiconductor MemoryOpposite ChannelMicroelectronicsSequential Hot-electron StressingFront/back ChannelSemiconductor Device
Hot-hole injection into the opposite channel of silicon-on-insulator (SOI) MOSFETs under hot-electron stress is reported. Sequential front/back-channel hot-electron stressing results in successive hot-electron/-hole injection, causing the threshold voltage to increase and decrease accordingly. This ability to inject hot holes into the opposite gate oxide can be used as an additional tool for studying the degradation mechanisms. Furthermore, it can be explored for possible use in designing SOI flash memory cells with back-channel-based erasing schemes.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Hot-electron-induced MOSFET degradation&#8212;Model, monitor, and improvement
Chenming Hu, Simon Tam, Fu-Chieh Hsu et al. · IEEE Transactions on Electron Devices · 1985 · 1.1K citations