D. J. Wouters

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen et al. · Applied Physics Letters · 2010 · 229 citations

Natural Sciences, Materials Engineering, Materials Science +16

Subthreshold slope in thin-film SOI MOSFETs

D. J. Wouters, J.-P. Colinge, H.E. Maes · IEEE Transactions on Electron Devices · 1990 · 151 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

L. Goux, Karl Opsomer, R. Degraeve et al. · Applied Physics Letters · 2011 · 99 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells

David Tio Castro, L. Goux, G.A.M. Hurkx et al. · 2007 · 54 citations

Engineering, Electrical Engineering, Materials Science +14

TiN x / HfO 2 interface dipole induced by oxygen scavenging

V. V. Afanas’ev, A. Stesmans, L. Pantisano et al. · Applied Physics Letters · 2011 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +16