G.J. Campisi

Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides

Robert E. Stahlbush, G.J. Campisi, J.B. McKitterick et al. · IEEE Transactions on Nuclear Science · 1992 · 96 citations

Engineering, Materials Engineering, Materials Science +15

A vacuum field effect transistor using silicon field emitter arrays

H.F. Gray, G.J. Campisi, Richard Greene · 1986 · 47 citations

Engineering, Electrical Engineering, Electronic Materials +9

Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs

S. Cristoloveanu, Sadanand M. Gulwadi, Dimitris E. Ioannou et al. · IEEE Electron Device Letters · 1992 · 44 citations

Engineering, Electrical Engineering, Electronic Materials +13

Vacuum integrated circuits

Richard Greene, Harry J. Gray, G.J. Campisi · 1985 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +12

Successive charging/discharging of gate oxides in SOI MOSFET's by sequential hot-electron stressing of front/back channel

A. Zaleski, Dimitris E. Ioannou, G.J. Campisi et al. · IEEE Electron Device Letters · 1993 · 20 citations

Engineering, Electrical Engineering, Materials Science +17