IEEE Circuits and Devices Magazine · 1989 · 34 citations · 32 references
EngineeringComputer EngineeringElectrical EngineeringComputer ArchitectureMicroelectronicsSemiconductor DevicesDevice ModelingIntegrated Circuit DesignMemory DevicesMemory HierarchyMemory Subsystem DesignVery-large-scale Integration LayoutCell DesignCell Topology DesignDesign CriteriaDynamic Random-access Memory DesignMemory Array ArchitectureMemory Cell DesignMemory Circuit DesignNon-volatile Memory Design
Recent major progress in the area of advanced DRAM cell structures is described, focusing on three-dimensional approaches. Cell design criteria are first outlined. Then a number of structures are discussed, namely, the stacked-capacitor cell, the trench-capacitor cell, the substrate-plate trench-capacitor cell, the dielectrically insulated trench cell, the buried stacked-capacitor cell, the folded-capacitor cell, the isolation-merged vertical-capacitor cell, the buried-capacitor or stacked transistor cell, and the trench transistor cell. Future trends in cell structures are projected.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A corrugated capacitor cell (CCC) for megabit dynamic MOS memories
H. Sunami, T. Kure, N. Hashimoto et al. · 1982 · 57 citations
Engineering, Computer Engineering, Electrical Engineering +15
A 5 V-only 64K dynamic RAM based on high S/N design
H. Masuda, R. Hori, Y. Kamigaki et al. · IEEE Journal of Solid-State Circuits · 1980 · 54 citations
Engineering, Computer Engineering, Electrical Engineering +17
A trench transistor cross-point DRAM cell
W.F. Richardson, D.M. Bordelon, G. Pollack et al. · 1985 · 47 citations