Concepedia

Memory Cell Design

Memory Cell Design is a hardware-level architectural methodology that specifies the structural and functional organization of individual storage units within a memory device, distinguished by its focus on optimizing data retention, access speed, and scalability at the transistor or circuit level.

703

Publications

36K

Citations

3.6K

Authors

458

Institutions

Publications per year

2017–2026

88

Parents

Publications

703

Ferroelectric Memories

J. F. Scott, Carlos A. Paz de Araújo · Science · 1989 · 3.8K citations

, , +17

A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

Jonathan E. Green, Jang Wook Choi, Akram Boukai et al. · Nature · 2007 · 1.2K citations

, , +13

Engineering a memory with LTD and LTP

Sadegh Nabavi, Rocky Fox, Christophe D. Proulx et al. · Nature · 2014 · 1K citations · Full text

, , +4

Phase change memory technology

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 890 citations · Full text

, , +17

Flash memory cells-an overview

Paolo Pavan, R. Bez, P. Olivo et al. · Proceedings of the IEEE · 1997 · 711 citations · Full text

, , +17

1–5 of 703

Authors

3.6K

  1. FP
    F. Pellizzer

    STMicroelectronics (Italy), Italy

    11 publications · 873 citations

    11

    h-index

  2. YX
    Yuan Xie

    Pennsylvania State University, United States

    10 publications · 532 citations

    10

    h-index

  3. KK
    Kinam Kim

    Samsung (South Korea), South Korea

    10 publications · 654 citations

    10

    h-index

  4. RB
    R. Bez

    STMicroelectronics (Italy), Italy

    10 publications · 1.2K citations

    10

    h-index

  5. FL
    Fabrizio Lombardi

    Northeastern University, United States

    10 publications · 295 citations

    10

    h-index

1–5 of 3.6K

Institutions

458

  1. Samsung (South Korea)

    Seoul, South Korea

    24 h-index

    437 publications

    34.8K citations

  2. Toshiba (Japan)

    Tokyo, Japan

    22 h-index

    398 publications

    25K citations

  3. IBM (United States)

    Armonk, United States

    21 h-index

    152 publications

    13.9K citations

  4. Hitachi (Japan)

    Tokyo, Japan

    19 h-index

    237 publications

    8.5K citations

  5. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    19 h-index

    75 publications

    3.6K citations

  6. Intel (United States)

    Santa Clara, United States

    19 h-index

    224 publications

    12.7K citations

  7. STMicroelectronics (Italy)

    Milan, Italy

    16 h-index

    149 publications

    9.8K citations

  8. NEC (Japan)

    Tokyo, Japan

    14 h-index

    94 publications

    2.5K citations

1–8 of 458

Venues

  1. IEEE Journal of Solid-State Circuits

    56 publications · 2.4K citations

    27

    h-index

  2. IEEE Transactions on Electron Devices

    49 publications · 2.1K citations

    23

    h-index

  3. IEEE Electron Device Letters

    26 publications · 741 citations

    17

    h-index

  4. Applied Physics Letters

    13 publications · 614 citations

    12

    h-index

  5. IEEE Transactions on Magnetics

    12 publications · 249 citations

    11

    h-index

1–5