Concepedia

Dynamic Random-access Memory Design

Dynamic Random-Access Memory Design is an academic concept referring to the systematic methodology of structuring and optimizing volatile semiconductor memory architectures that require periodic charge refreshment to retain data, distinguishing it from static or non-volatile memory design approaches.

340

Publications

12.8K

Citations

1.6K

Authors

243

Institutions

Publications per year

2017–2026

73

Parents

Publications

340

A High-Throughput and Power-Efficient FPGA Implementation of YOLO CNN for Object Detection

Duy Thanh Nguyen, Tuan Nghia Nguyen, Hyun Kim et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2019 · 426 citations

, , +17

Synthesis and Dynamic Random Access Memory Behavior of a Functional Polyimide

Qidan Ling, Feng‐Chyuan Chang, Yan Song et al. · Journal of the American Chemical Society · 2006 · 314 citations

, , +14

Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

J. Mandelman, R.H. Dennard, G. Bronner et al. · IBM Journal of Research and Development · 2002 · 269 citations

, , +17

A 3-GHz 70-Mb SRAM in 65-nm CMOS Technology With Integrated Column-Based Dynamic Power Supply

U.K. Bhattacharya, Zhanping Chen, Fatih Hamzaoglu et al. · IEEE Journal of Solid-State Circuits · 2005 · 240 citations

, , +17

Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Nature Nanotechnology · 2021 · 234 citations · Full text

, , +12

1–5 of 340

Authors

1.6K

  1. KI
    K. Itoh

    Hitachi (Japan), Japan

    9 publications · 522 citations

    9

    h-index

  2. OM
    Onur Mutlu

    Carnegie Mellon University, United States

    6 publications · 361 citations

    6

    h-index

  3. TK
    T. Kure

    Hitachi (Japan), Japan

    5 publications · 187 citations

    5

    h-index

  4. SS
    Subramanian S. Iyer

    IBM Research - Thomas J. Watson Research Center, United States

    5 publications · 259 citations

    5

    h-index

  5. TK
    T. Kirihata

    IBM (United States), United States

    5 publications · 145 citations

    5

    h-index

1–5 of 1.6K

Institutions

243

  1. IBM (United States)

    Armonk, United States

    17 h-index

    168 publications

    6.1K citations

  2. Hitachi (Japan)

    Tokyo, Japan

    17 h-index

    108 publications

    3.3K citations

  3. Intel (United States)

    Santa Clara, United States

    14 h-index

    67 publications

    4.8K citations

  4. Toshiba (Japan)

    Tokyo, Japan

    12 h-index

    101 publications

    1.9K citations

  5. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    11 h-index

    40 publications

    1.2K citations

  6. Mitsubishi Electric (Japan)

    Tokyo, Japan

    10 h-index

    46 publications

    811 citations

  7. Texas Instruments (United States)

    Dallas, United States

    10 h-index

    36 publications

    1.1K citations

  8. NEC (Japan)

    Tokyo, Japan

    9 h-index

    53 publications

    1.2K citations

1–8 of 243

Venues

  1. IEEE Transactions on Electron Devices

    32 publications · 1.5K citations

    22

    h-index

  2. IEEE Journal of Solid-State Circuits

    45 publications · 1.5K citations

    22

    h-index

  3. IEEE Electron Device Letters

    13 publications · 670 citations

    12

    h-index

  4. IBM Journal of Research and Development

    10 publications · 806 citations

    10

    h-index

  5. 8

    h-index

1–5