Takashi Ohsawa - Concepedia

Author

Takashi Ohsawa

Toshiba (Japan)ORCID

Also Known As

T. Ohsawa, Takashi OHSAWA, Takashi Ohsawa

107

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)Tohoku University Spintronics Research Network of Japan Toshiba (South Korea)NEC (Japan)

About

Takashi Ohsawa is an author at Toshiba (Japan) specializing in electrical engineering, computer engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	34	957
2	Computer Engineering	21	31	921
3	Applied Physics	8	8	162
4	Social Sciences	1	1	14
5	Biomedical Engineering	1	1	24

Takashi Ohsawa

Publications

968

Citations

H-Index

Page 1

	Year	Citations
Memory design using a one-transistor gain cell on SOI Takashi Ohsawa, K. Fujita, Tatsuya Higashi, IEEE Journal of Solid-State Circuits Non-volatile MemoryElectrical EngineeringEngineeringMemory DesignComputer Engineering	2002	96
A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme Takashi Ohsawa, Hiroki Koike, S. Miura, IEEE Journal of Solid-State Circuits Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyComputer Architecture	2013	81
High-speed simulator including accurate MTJ models for spintronics integrated circuit design Noboru Sakimura, Ryusuke Nebashi, Y. Tsuji, EngineeringVlsi DesignComputer ArchitectureSimulationIntegrated Circuits Emphasis	2012	60
1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times Takashi Ohsawa, Hiroki Koike, S. Miura, Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyComputer Architecture	2012	59
A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories Takashi Ohsawa, S. Miura, Kentaro Kinoshita, Non-volatile MemoryElectrical EngineeringEngineeringBackground Write SchemeNonvolatile E-memories	2013	34
FBC (Floating Body Cell) for embedded DRAM on SOI K. Inoh, T. Shino, Hisao Yamada, Hardware SecurityNon-volatile MemoryElectrical EngineeringCell TransistorEngineering	2003	34
Floating Body RAM Technology and its Scalability to 32nm Node and Beyond T. Shino, N. Kusunoki, Tomoki Higashi, Hardware SecurityElectrical EngineeringEngineeringVlsi DesignBody Ram Technology	2006	33
A new on-chip converter for submicrometer high-density DRAMs T. Furuyama, Yoshihiro Watanabe, Takashi Ohsawa, IEEE Journal of Solid-State Circuits Low-power ElectronicsVoltage ConverterElectrical EngineeringFeedback-type Voltage RegulatorEngineering	1987	33
Restructuring of memory hierarchy in computing system with spintronics-based technologies Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike, SpintronicsElectrical EngineeringComputer Memory HierarchiesEngineeringMemory Architecture	2012	30
High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction Takashi Ohsawa, F. Iga, Shoji Ikeda, Japanese Journal of Applied Physics SpintronicsMagnetismElectrical EngineeringEngineeringNon-volatile Memory	2012	30

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