EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignIntegrated Circuit DesignMemory DevicesMemory Subsystem DesignMos CapacitorsCapacitanceDynamic Random-access MemoryDynamic Random-access Memory DesignMemory Cell DesignMemory Circuit DesignMemory CircuitsNon-volatile Memory Design
A new dRAM cell named (Corrugated Capacitor Cell) has been successfully developed based on the one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in an almost independent increase in storage capacitance without cell size enlargement. A typical value of 45 fF has been obtained with 4 × 8 µm2CCC having a 2.5-µm deep moat and a capacitor insulator equivalent to 15 nm SiO 2 in thickness. A signal of 200 mV is realized in 32 kbit dRAM operation with a folded-bit line arrangement having 128 bit identical CCC's. The CCC concept is promising for generations of 1 Mbit dRAM's and beyond.