Dynamic Random-access Memory

Dynamic Random-Access Memory is a type of volatile semiconductor memory that stores each bit of data in a separate capacitor within an integrated circuit, requiring periodic refreshing to maintain data integrity due to charge leakage.

783

Publications

43.6K

Citations

3.3K

Authors

540

Institutions

Publications per year

2017–2026

191

Variants

Dram

Parents

Integrated Circuit DevicesMemory Devices

Publications

783

Applications of Modern Ferroelectrics

J. F. Scott · Science · 2007 · 3.2K citations

Engineering, Electrical Engineering, Materials Science +17

Device scaling limits of Si MOSFETs and their application dependencies

D.J. Frank, R.H. Dennard, E. Nowak et al. · Proceedings of the IEEE · 2001 · 1.6K citations

Engineering, Computer Engineering, Electrical Engineering +17

Basic mechanisms and modeling of single-event upset in digital microelectronics

P.E. Dodd, L. W. Massengill · IEEE Transactions on Nuclear Science · 2003 · 1.1K citations

Engineering, Computer Engineering, Electrical Engineering +17

The mechanism of electroforming of metal oxide memristive switches

J. Joshua Yang, Feng Miao, Matthew D. Pickett et al. · Nanotechnology · 2009 · 851 citations

Engineering, Computer Engineering, Materials Science +17

Magnetically engineered spintronic sensors and memory

S. Parkin, Xin Jiang, Christian Kaiser et al. · Proceedings of the IEEE · 2003 · 649 citations

Natural Sciences, Materials Engineering, Materials Science +17

1–5 of 783

Authors

3.3K

CS
Cheol Seong Hwang
Seoul National University, South Korea
15 publications · 1.4K citations
15
h-index
KI
K. Itoh
Hitachi (Japan), Japan
12 publications · 614 citations
12
h-index
OM
Onur Mutlu
Carnegie Mellon University, United States
10 publications · 1.3K citations
10
h-index
NW
Norbert Wehn
University of Kaiserslautern, Germany
10 publications · 289 citations
10
h-index
MJ
Matthias Jung
University of Kaiserslautern, Germany
10 publications · 289 citations
10
h-index

1–5 of 3.3K

Institutions

540

1–8 of 540

Venues

IEEE Transactions on Electron Devices
61 publications · 2.6K citations
28
h-index
Applied Physics Letters
38 publications · 3K citations
27
h-index
IEEE Journal of Solid-State Circuits
47 publications · 1.3K citations
23
h-index
Japanese Journal of Applied Physics
JJAP · 34 publications · 1.2K citations
20
h-index
IEEE Electron Device Letters
31 publications · 1.3K citations
20
h-index

1–5