SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior

Abstract

We report on the thin-body tunneling field-effect transistors (TFETs) built on SOI substrates with both SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate dielectrics. The source-drain leakage current is suppressed by the introduction of intrinsic regions adjacent to the drain side, reducing the electric field at the tunnel junction. We also investigate the temperature dependence of the TFET characteristics, as well as the low frequency noise (LFN) behavior. Unlike conventional MOSFETs, the TFET LFN behaves as 1/f <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> even for large gate areas, indicating less trapping due to its much smaller effective gate length.