Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing

Abstract

Forward current ideality factors of 1.01+or-0.3% were obtained over a large current range extending down to 1 pA. Reverse current densities measured 3.5+or-1.2 nA/cm/sup 2/ at a reverse bias of -5 V. Breakdown occurred at the expected value of -22 V and displayed a very sharp current rise of 30 decades/V. Extremely uniform light emission from the junction was observed under a microscope at breakdown, this phenomenon is a visual indication that the material is of high quality and suitable for high-performance minority-carrier devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>