Concepedia

Reverse Bias Characteristics

Reverse Bias Characteristics is a semiconductor device behavior that describes the current-voltage response of a p-n junction when the external voltage is applied in a direction that increases the width of the depletion region, thereby suppressing majority carrier current and allowing only a small, nearly constant reverse saturation current until breakdown occurs.

1.1K

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46.8K

Citations

4.8K

Authors

942

Institutions

Publications per year

2017–2026

201

Variants

Reverse Bias BehaviorReverse Bias I-v Characteristics

Parents

Publications

1.1K

A new recombination model for device simulation including tunneling

G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers · IEEE Transactions on Electron Devices · 1992 · 914 citations

, , +16

Electron transport of inhomogeneous Schottky barriers: A numerical study

James P. Sullivan, R. T. Tung, M.R. Pinto et al. · Journal of Applied Physics · 1991 · 736 citations

, , +17

Field-Effect Transistors Built from All Two-Dimensional Material Components

Tania Roy, Mahmut Tosun, Jeong Seuk Kang et al. · ACS Nano · 2014 · 674 citations · Full text

, , +17

42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

Laurent Vivien, Johann Osmond, Jean-Marc Fédéli et al. · Optics Express · 2009 · 436 citations · Full text

, , +17

Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

I. S. Jeong, Jae Hoon Kim, Seongil Im · Applied Physics Letters · 2003 · 384 citations

, , +17

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Authors

4.8K

  1. JC
    Joe C. Campbell

    The University of Texas at Austin, United States

    10 publications · 362 citations

    10

    h-index

  2. LV
    Laurent Vivien

    Centre National de la Recherche Scientifique, France

    8 publications · 750 citations

    8

    h-index

  3. MR
    Manijeh Razeghi

    Northwestern University, United States

    8 publications · 509 citations

    8

    h-index

  4. DM
    Delphine Marris‐Morini

    Université Paris-Sud, France

    8 publications · 750 citations

    8

    h-index

  5. OB
    Otwin Breitenstein

    Max Planck Institute of Microstructure Physics, Germany

    7 publications · 473 citations

    7

    h-index

1–5 of 4.8K

Institutions

942

  1. Massachusetts Institute of Technology

    Cambridge, United States

    20 h-index

    78 publications

    5.7K citations

  2. Chinese Academy of Sciences

    Beijing, China

    19 h-index

    186 publications

    8.7K citations

  3. Centre National de la Recherche Scientifique

    Paris, France

    18 h-index

    93 publications

    6.4K citations

  4. University of California, Santa Barbara

    Santa Barbara, United States

    15 h-index

    71 publications

    4.3K citations

  5. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    14 h-index

    38 publications

    1.2K citations

  6. Institute of Semiconductors

    Beijing, China

    13 h-index

    101 publications

    5.7K citations

  7. University of Electronic Science and Technology of China

    Chengdu, China

    13 h-index

    65 publications

    1.7K citations

  8. University of Cambridge

    Cambridge, United Kingdom

    12 h-index

    61 publications

    6K citations

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Venues

  1. Applied Physics Letters

    213 publications · 10.7K citations

    55

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  2. Journal of Applied Physics

    97 publications · 4.4K citations

    35

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  3. IEEE Transactions on Electron Devices

    73 publications · 3.7K citations

    32

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  4. IEEE Photonics Technology Letters

    IPTEL · 31 publications · 1.4K citations

    23

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  5. IEEE Electron Device Letters

    46 publications · 1.5K citations

    23

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