Optics Express · 2009 · 436 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated PhotonicsOptoelectronic DevicesPhotodetectorsSemiconductor DetectorsBandwidthDark CurrentDetector IntegrationGermanium DetectorsGermanium PhotodetectorsIntegrated PhotodetectorsPhotodetector BandwidthReverse Bias Characteristics
A compact pin Ge photodetector is integrated into a sub‑micron SOI rib waveguide, with a 15 µm length using butt coupling to fully absorb 1.55 µm light, and fabricated with a CMOS‑compatible process. The device achieves a –3 dB bandwidth of 42 GHz at 4 V reverse bias, a responsivity of 1 A/W at 1.55 µm, a low dark current density of 60 mA/cm², and 1 A/W responsivity at 1.52 µm under –0.5 V bias.
A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.
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High speed silicon Mach-Zehnder modulator
Ling Liao, Dean Samara-Rubio, M. Morse et al. · Optics Express · 2005 · 520 citations · Full text
High performance, waveguide integrated Ge photodetectors
Donghwan Ahn, Ching-yin Hong, Jifeng Liu et al. · Optics Express · 2007 · 468 citations · Full text
31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate
Tao Yin, Rami Cohen, Mike Morse et al. · Optics Express · 2007 · 395 citations · Full text