S. Wilson

Growth of GeSi/Si strained-layer superlattices using limited reaction processing

C. M. Gronet, C. A. King, W. G. Opyd et al. · Journal of Applied Physics · 1987 · 62 citations · Full text

Engineering, Materials Engineering, Materials Science +10

Epitaxial Cu2ZnSnS4 thin film on Si (111) 4° substrate

Ning Song, Matthew Young, Fangyang Liu et al. · Applied Physics Letters · 2015 · 48 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

C. M. Gronet, J. C. Sturm, Katherine Williams et al. · Applied Physics Letters · 1986 · 44 citations

Engineering, Materials Engineering, Materials Science +17

In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors

James C. Sturm, C. M. Gronet, C. A. King et al. · IEEE Electron Device Letters · 1986 · 21 citations

Engineering, Electrical Engineering, Materials Science +14

Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing

C. A. King, C. M. Gronet, J. F. Gibbons et al. · IEEE Electron Device Letters · 1988 · 18 citations

Engineering, Electrical Engineering, Materials Science +17