Junction Breakdown is a semiconductor phenomenon in which a p-n junction experiences a sudden increase in reverse current due to impact ionization or quantum tunneling when the applied reverse bias voltage exceeds a critical threshold.
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P-n Junction Breakdown
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1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi, Ken Goto, Hisashi Murakami et al. · Applied Physics Letters · 2017 · 576 citations
Photon Emission from Avalanche Breakdown in Silicon
A. G. Chynoweth, K. G. McKay · Physical Review · 1956 · 477 citations
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University of Electronic Science and Technology of China, China
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Xi'an, China
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