Theory of Semiconductor Superjunction Devices

TLDR

The paper introduces semiconductor superjunction (SJ) theory, aiming to overcome the trade‑off between breakdown voltage and on‑resistance in conventional devices by using alternately stacked, heavily doped thin p‑ and n‑type layers. The mechanism relies on tuning doping levels and layer thicknesses to create a pn‑junction‑like structure with low on‑resistance and high breakdown voltage, and the authors derive analytical formulas for the ideal specific on‑resistance and breakdown voltage. Simulations show that SJ devices can achieve on‑resistance less than one hundredth of conventional devices.

Abstract

A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers. By controlling the degree of doping and the thickness of these layers, according to the SJ theory, this structure operates as a pn junction with low on-resistance and high breakdown voltage. Analytical formulas for the ideal specific on-resistance and the ideal breakdown voltage of SJ devices are theoretically derived. Analysis based on the formulas and device simulations reveals that the on-resistance of SJ devices can be reduced to less than 10 -2 that of conventional devices.