RF CMOS reliability simulations

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

Chenming Hu, Simon Tam, Fu-Chieh Hsu et al. · IEEE Transactions on Electron Devices · 1985 · 1.1K citations

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 637 citations

Engineering, Glow Discharge, New Insights +20

An empirical model for device degradation due to hot-carrier injection

Eiji Takeda, Norio Suzuki · IEEE Electron Device Letters · 1983 · 551 citations

Device Modeling, Electrical Engineering, Engineering +13

Consistent model for short-channel nMOSFET after hard gate oxide breakdown

B. Kaczer, R. Degraeve, A. De Keersgieter et al. · IEEE Transactions on Electron Devices · 2002 · 166 citations

Device Modeling, Electrical Engineering, Engineering +10

IC reliability simulation

Chenming Hu · IEEE Journal of Solid-State Circuits · 1992 · 87 citations

Engineering, System Reliability, Integrated Circuits +16