G.T. Sasse

MOSFET Degradation Under RF Stress

G.T. Sasse, F.G. Kuper, Jurriaan Schmitz · IEEE Transactions on Electron Devices · 2008 · 49 citations · Full text

Electrical Engineering, Engineering, Rf Semiconductor +11

Record RF performance of standard 90 nm CMOS technology

L.F. Tirmejer, R.J. Havens, R. de Kort et al. · 2005 · 43 citations · Full text

Inductor Quality Factor, Electrical Engineering, Standard Logic 90 +12

The Relation Between Degradation Under DC and RF Stress Conditions

A.J. Scholten, Daniel Stephens, G.D.J. Smit et al. · IEEE Transactions on Electron Devices · 2011 · 36 citations

Rf Stress Conditions, Electrical Engineering, Reliability Engineering +15

RF CMOS reliability simulations

G.T. Sasse, Mustafa Açar, F.G. Kuper et al. · Microelectronics Reliability · 2008 · 20 citations

Reliability, Electrical Engineering, Reliability Engineering +9

An LDMOS hot carrier model for circuit reliability simulation

G.T. Sasse, J. Claes, Bart de Vries · 2014 · 16 citations

Reliability, Electrical Engineering, Reliability Engineering +15