Dynamic ‘hour glass’ model for SET and RESET in HfO<inf>2</inf> RRAM

Abstract

An analytic dynamic hour glass model for HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> RRAM is demonstrated, describing the reset as a dynamic equilibrium process and the set as a constriction growth limited by ion mobility and current compliance. The dependence on time, voltage and forming conditions is in good constriction growth agreement with experiments. Since the model is fully analytical, it can be implemented in a circuit simulator.