Y.Y. Chen

Dynamic ‘hour glass’ model for SET and RESET in HfO<inf>2</inf> RRAM

R. Degraeve, A. Fantini, Sergiu Clima et al. · 2012 · 81 citations

Engineering, Electrical Engineering, Materials Science +15

A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability

B. Govoreanu, D. Crotti, Subhali Subhechha et al. · 2015 · 45 citations

Engineering, Electrical Engineering, Analog Electronics +14

Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta<inf>2</inf>O<inf>5</inf>\Ta RRAM device

L. Goux, A. Fantini, A. Redolfi et al. · 2014 · 39 citations

Engineering, Electrical Engineering, Materials Science +9

Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta<inf>2</inf>O<inf>5</inf> RRAM cells

C.Y. Chen, L. Goux, A. Fantini et al. · 2014 · 34 citations

Engineering, Materials Engineering, Materials Science +12

Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates

Y.Y. Chen, I.M. Liu, Mark Gardner et al. · 2002 · 29 citations

Engineering, Electrical Engineering, Microelectronics +16