Mark Gardner

Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics

Yue Kuo, Jiang Lu, Jiong Yan et al. · ECS Transactions · 2006 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical properties of amorphous high-/spl kappa/ HfTaTiO gate dielectric with dielectric constants of 40-60

N. Lu, H.-J. Li, Mark Gardner et al. · IEEE Electron Device Letters · 2005 · 34 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides

Mingang Hao, W.-M. Chen, K. Lai et al. · Applied Physics Letters · 1995 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance

G. Bersuker, J.H. Sim, Chadwin D. Young et al. · MRS Proceedings · 2004 · 30 citations

Engineering, Electrical Engineering, Electronic Materials +14

Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates

Y.Y. Chen, I.M. Liu, Mark Gardner et al. · 2002 · 29 citations

Engineering, Electrical Engineering, Microelectronics +16