An analytical model for back-gate effects on ultrathin-film SOI MOSFET's

Abstract

An analytical model including the semiconducting substrate effect for silicon-on-insulator (SOI) MOSFET threshold and subthreshold operation is presented. The potential drop across the substrate tends to reduce the front-gate threshold voltage as well as subthreshold swing. However, if the substrate or the back-gate surface is accumulated, the substrate effects can be neglected. Five comprehensive operation regions under various bias conditions are distinguished and discussed for the first time.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

References

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