Modes of operation and radiation sensitivity of ultrathin SOI transistors

Abstract

Improved short-channel behavior, reduced subthreshold slopes, and mobility enhancements previously observed in NMOS transistors made in thin, fully depleted silicon-on-insulator (SOI) films are discussed. These results were obtained with the back interface held in depletion during operation. It is shown from basic principles of device operation that the observed performance improvements are sensitive to the applied substrate voltage. In addition, the exposure of the back interface to the surface depletion region in these devices makes the transistor performance sensitive to radiation-induced charging effects at the back interface. The anticipated effects of radiation on threshold voltage, subthreshold slope, and mobility in ultrathin, fully depleted SOI transistors are discussed, and an estimate is made of the expected radiation sensitivity of these parameters for a typical ultrathin SOI technology.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>