On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

P. Moens, P. Vanmeerbeek, Abhishek Banerjee, +11

EngineeringGan Power DevicesPower ElectronicsSilicon On InsulatorSemiconductor Device +14

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee, +14

Dynamic RonElectrical EngineeringEngineeringPower DeviceApplied Physics +10

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels, +11

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringTrue E-mode Performance +9

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

M. Fernández, X. Perpiñà, Jaume Roig-Guitart, +3

IEEE Transactions on Industrial Electronics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringMedium-voltage Gan CascodesGan Mishemts +11

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren, +11

Wide-bandgap SemiconductorDynamic RonElectrical EngineeringEngineeringPower Device +10

Hot Hole Degradation Effects in Lateral nDMOS Transistors

P. Moens, G. Vandenbosch, C. DeKeukeleire, +3

IEEE Transactions on Electron Devices

Electrical EngineeringSemiconductor DeviceEngineeringLdmos TransistorsStress-induced Leakage Current +7

A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors

P. Moens, Johann Mertens, F. Bauwens, +3

Device ModelingElectrical EngineeringEngineeringHot Carrier DegradationLdmos Transistors +7

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

M. Fernández, X. Perpiñà, J. Roig, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringGan HemtsP-gan Hemts Drain +10

Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

Dirk J. Wouters, M. Tack, G. Groeseneken, +2

IEEE Transactions on Electron Devices

Electrical EngineeringCharge-pumping TechniqueBulk Mosfet DevicesTransistor LevelEngineering +8

The multistable charge-controlled memory effect in SOI MOS transistors at low temperatures

M. Tack, M.-H. Gao, Cor Claeys, +1

IEEE Transactions on Electron Devices

Non-volatile MemoryEngineeringEmerging Memory TechnologyHigh-speed ElectronicsSoi Mos Transistors +14