M. Tack

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

P. Moens, P. Vanmeerbeek, Abhishek Banerjee et al. · 2015 · 109 citations

Engineering, Gan Power Devices, Power Electronics +16

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Dynamic Ron, Electrical Engineering, Engineering +12

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Niels Posthuma, Shuzhen You, Steve Stoffels et al. · 2018 · 106 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

M. Fernández, X. Perpiñà, Jaume Roig-Guitart et al. · IEEE Transactions on Industrial Electronics · 2017 · 88 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren et al. · 2015 · 77 citations · Full text

Wide-bandgap Semiconductor, Dynamic Ron, Electrical Engineering +12