Jaume Roig-Guitart

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Dynamic Ron, Electrical Engineering, Engineering +12

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

M. Fernández, X. Perpiñà, Jaume Roig-Guitart et al. · IEEE Transactions on Industrial Electronics · 2017 · 88 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

<inline-formula> <tex-math notation="LaTeX">${C}_{\textsf{OSS}}$ </tex-math> </inline-formula> Measurements for Superjunction MOSFETs: Limitations and Opportunities

Grayson Zulauf, Jaume Roig-Guitart, J.D. Plummer et al. · IEEE Transactions on Electron Devices · 2018 · 33 citations

Device Modeling, Electrical Engineering, Dc Hysteresis +11

Small- and Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs

Jia Zhuang, Grayson Zulauf, Jaume Roig-Guitart et al. · IEEE Transactions on Electron Devices · 2021 · 26 citations

Wide-bandgap Semiconductor, Engineering, Gan Hemt +19

Origins of Soft-Switching<i>C</i>_ossLosses in SiC Power MOSFETs and Diodes for Resonant Converter Applications

Zikang Tong, Jaume Roig-Guitart, Thomas Neyer et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2020 · 20 citations

Wide-bandgap Semiconductor, Engineering, Power Devices +16