IEEE Transactions on Electron Devices · 2003 · 23 citations · 16 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationMixed-signal Integrated Circuit DesignMixed-signal ModelingSmall-signal AnalysisCompact Device ModelingCompact Model Parameter ExtractionCompact ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingMetal-oxide-semiconductor Field-effect Transistor Small-signal ModelsMosfet ModelingParameter ExtractionSmall-signal Parameter Extraction
For pt. see ibid., vol. 50, no. 10, p. 2135 (2003). Based on the physical double-gate MOSFET model described in Part I, we present a systematic parameter extraction methodology that avoids parameter interdependence between different physical effects whenever possible. Several extraction schemes are compared for precise modeling of small-signal and large-signal characteristics. The physical model and the extraction methodology are verified through the reproduction of the simulated drain current, incremental drain resistance, and transconductance per unit current, which are parameters of particular interest to mixed-signal circuit designs.
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