10nm lines and spaces written in HSQ, using electron beam lithography

Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations

Hideo Namatsu, Yasuo Takahashi, Kenji Yamazaki et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 286 citations

Engineering, Materials Engineering, Materials Science +11

Ultrahigh resolution of calixarene negative resist in electron beam lithography

Jun‐ichi Fujita, Y. Ohnishi, Yukinori Ochiai et al. · Applied Physics Letters · 1996 · 242 citations

Engineering, Materials Engineering, Materials Science +14

Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)

Walter Hu, K. Sarveswaran, Marya Lieberman et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 239 citations

Engineering, Materials Engineering, Materials Science +11

Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development

Shazia Yasin, D. G. Hasko, H. Ahmed · Applied Physics Letters · 2001 · 163 citations

Natural Sciences, Materials Engineering, Materials Science +13

Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

H. Namatsu, Toru Yamaguchi, Masao Nagase et al. · Microelectronic Engineering · 1998 · 156 citations

Natural Sciences, Materials Engineering, Materials Science +8