IEEE Transactions on Electron Devices · 1992 · 48 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsNoise In Semiconductor DevicesSemiconductor InterfacesCharge PumpingDefect DensityDefect FormationMetal-oxide-semiconductor Field-effect Transistor ModelingNoise In Metal-oxide-semiconductor Field-effect TransistorsSilicon-on-insulator TechnologyTrap CharacterizationTraps
A comprehensive investigation of edge effects in LOCOS-isolated silicon-on-insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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