Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 37 citations · 13 references
EngineeringElectrode-electrolyte InterfaceChemistryPolyethylene GlycolProfile MonitorElectrometallurgyChemical EngineeringHybrid MaterialsElectrochemical InterfaceElectrode Reaction MechanismCopper ElectrodepositionMaterials ScienceMaterials EngineeringElectrical EngineeringSurface ElectrochemistryCopper Profile3D PrintingElectrochemistryAdditive SystemsNanomaterialsNatural SciencesSurface ScienceDamascene Cu ElectroplatingElectrochemical Surface Science
Gap-filling dynamics of several different species of additives for copper electrodeposition was investigated by monitoring the cross section of a partially filled copper profile on the scanning electron microscopy photo. The filling ration Δy/Δx between “bottom-up” with “sidewall shift” was found to be proportional to the filling power of additives. The adsorption-diffusion model combined with cathode polarization and cyclic voltammetric stripping measurements was employed to explain the attribution of additives in superfilling phenomena. The superfilling dynamics was achieved under behavior of additives providing selective inhibition gradient within the damascene feature. By means of those analyses, we have optimized the appropriate amount of additives and achieved the superfilling performance for 0.15 μm vias with aspect ratio 6 by an acid-copper electrolyte with polyethylene glycol, C1−, and 2-mercaptopyridine (2-MP). Due to the additive of 2-MP, chelate formed which enhanced adsorption ability on Cu0 surface, and the concentration gradient between side-wall shift and bottom-up in the damascene became high enough to attend superfilling electroplating.
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Full copper wiring in a sub-0.25 μm CMOS ULSI technology
D. Edelstein, J. Heidenreich, R. Goldblatt et al. · 2002 · 350 citations