Applied Physics Letters · 1994 · 43 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor MaterialsSurface ScienceElectron DiffractionScanning Probe MicroscopySemiconductor PhysicsSemiconductor SurfacesSurface CrystallographySurface PhysicsAtomic Model BuildingAtomic-scale Surface ImagingHeuristicsMicroscopy ImagingReflection High-energy Electron DiffractionScanning Electron MicroscopyScanning Electron Microscopy AnalysisScanning Electron Microscopy Surface Analysis
Scanning tunneling microscopy (STM) images of smooth, in situ prepared, sulfur-terminated (S-terminated) GaAs(001) surface reconstruction are presented. It is found that (2×6) surface reconstruction is dominant on the S-terminated GaAs(001) surface. This (2×6) reconstruction, of which the cell contains five S-S adatom dimers, is determined by both STM and reflection high-energy electron diffraction. The atomic model, which is consistent with both STM images and electron counting heuristics, is also shown. Moreover, this (2×6) reconstruction is also observed in the case of an (NH4)2Sx-treated surface.
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Haruhiro Oigawa, Jia-Fa Fan, Yasuo Nannichi et al. · Japanese Journal of Applied Physics · 1991 · 247 citations
Natural Sciences, Materials Engineering, Materials Science +17