Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition

Shiro Tsukamoto, Y. Nagamune, M. Nishioka, +1

Journal of Applied Physics

Gaas Quantum WiresSuccessful FabricationEngineeringOptoelectronic DevicesSemiconductor Nanostructures +15

Photoluminescence spectra and anisotropic energy shift of GaAs quantum wires in high magnetic fields

Y. Nagamune, Yasuhiko Arakawa, Shiro Tsukamoto, +3

Physical Review Letters

Gaas Quantum WiresPhotonicsPhotoluminescenceEngineeringPhysics +9

Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth

Shiro Tsukamoto, Y. Nagamune, M. Nishioka, +1

Applied Physics Letters

Gaas Quantum WiresEngineeringOptoelectronic DevicesChemical DepositionSemiconductor Nanostructures +14

New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy

Takaaki Mano, Katsuyuki Watanabe, Shiro Tsukamoto, +3

Japanese Journal of Applied Physics

SemiconductorsIi-vi SemiconductorElectrical EngineeringOptical MaterialsEngineering +13

Fabrication of InGaAs quantum dots on GaAs(001) by droplet epitaxy

Takaaki Mano, Kenjiro Watanabe, Shiro Tsukamoto, +3

Journal of Crystal Growth

Electrical EngineeringEngineeringQuantum DeviceApplied PhysicsQuantum Dots +5

Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates

Dimosthenis Toliopoulos, Alexey Fedorov, Sergio Bietti, +8

Nanomaterials

Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy

Takaaki Mano, Katsuyuki Watanabe, Shiro Tsukamoto, +7

Applied Physics Letters

Materials ScienceDetailed Cross-sectional StructureIi-vi SemiconductorNanoscale IngaasEngineering +12

GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth

Y. Nagamune, M. Nishioka, Shiro Tsukamoto, +1

Applied Physics Letters

Materials ScienceSitu FabricationIi-vi SemiconductorPhotoluminescenceSelective Epitaxial Growth +13

Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, +2

Applied Physics Letters

EngineeringGallium SourceOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +16

Fabrication of GaAs arrowhead-shaped quantum wires by metalorganic chemical vapor deposition selective growth

Shiro Tsukamoto, Y. Nagamune, M. Nishioka, +1

Applied Physics Letters

Materials ScienceEngineeringPhysicsNanoelectronicsQuantum Wire +10