Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth

Abstract

GaAs triangular-shaped quantum wires with the lateral width of ∼10 nm are fabricated by metalorganic chemical vapor selective deposition growth technique. The lateral dimension is determined by both photoluminescence (PL) measurement and a high-resolution scanning electron micrograph observation. A systematic change in the size of the quantum wire exhibits consistent blue shifts of the PL peak keeping high intensities, which demonstrates enhanced two-dimensional quantum confinement with the material of high quality.