John A. Lebens

Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

John A. Lebens, Charles S. Tsai, Kerry J. Vahala et al. · Applied Physics Letters · 1990 · 126 citations

Engineering, Gaas Peak, Dot Structures +22

Equilibrium tunneling from the two-dimensional electron gas in GaAs: Evidence for a magnetic-field-induced energy gap

R. C. Ashoori, John A. Lebens, N. P. Bigelow et al. · Physical Review Letters · 1990 · 98 citations

Categoryquantum Electronics, Charge Excitations, Engineering +17

Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence

Hal A. Zarem, Peter C. Sercel, John A. Lebens et al. · Applied Physics Letters · 1989 · 70 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +14

Energy gaps of the two-dimensional electron gas explored with equilibrium tunneling spectroscopy

R. C. Ashoori, John A. Lebens, N. P. Bigelow et al. · Physical review. B, Condensed matter · 1993 · 64 citations

Two-dimensional Electron Gas, Quantum Science, Categoryquantum Electronics +15

Effect of Al mole fraction on carrier diffusion lengths and lifetimes in Al<i>x</i>Ga1−<i>x</i>As

Hal A. Zarem, John A. Lebens, K. B. Nordstrom et al. · Applied Physics Letters · 1989 · 49 citations

Materials Science, Engineering, Indirect Valleys +13