Applied Physics Letters · 1984 · 227 citations · 11 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDouble Heterostructure DevicesLasersNoise In Heterostructure DevicesQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresRelaxation OscillationsSemiconductor Laser Diodes
We calculate the relaxation oscillation corner frequency fr and the linewidth enhancement factor α for both a quantum well and a quantum wire semiconductor laser. A comparison of the results to those of a conventional double heterostructure device indicates that fr can be enhanced by 2× in the quantum well case and 3× in the quantum wire case while α is reduced in both cases.
11
Band structure of indium antimonide
E. O. Kane · Journal of Physics and Chemistry of Solids · 1957 · 3.7K citations
Theory of the linewidth of semiconductor lasers
C. H. Henry · IEEE Journal of Quantum Electronics · 1982 · 2.4K citations
Quantum-well heterostructure lasers
N. Holonyak, R. M. Kolbas, Russell D. Dupuis et al. · IEEE Journal of Quantum Electronics · 1980 · 545 citations