B. E. Maile - Concepedia

Author

B. E. Maile

University of Stuttgart

Also Known As

B. E. MAILE, B. E. Maile, B. Maile, B.E. Maile, Bernd E. Maile, Bernd Ernst Maile, Maile, Bernd

Publications

525

Citations

H-Index

Concepts

All Affiliations

University of Stuttgart Daimler (Germany)IBM Research - Zurich RWTH Aachen University Siemens (Germany)

About

B. E. Maile is an author at University of Stuttgart specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	396
2	Applied Physics	11	13	401
3	Physics	10	11	360
4	Electrical Engineering	9	9	279
5	Materials Science	2	2	56

B. E. Maile

Publications

429

Citations

H-Index

Page 1

	Year	Citations
Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires B. E. Maile, A. Forchel, R. Germann, Applied Physics Letters Categoryquantum ElectronicsOptical MaterialsEngineeringExcitonic RecombinationOptoelectronic Devices	1989	90
Time-resolved investigations of sidewall recombination in dry-etched GaAs wires G. V. Mayer, B. E. Maile, R. Germann, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringEngineeringPhysicsApplied Physics	1990	58
Carrier capture in intermixed quantum wires with sharp lateral confinement H. Leier, A. Forchel, B. E. Maile, Applied Physics Letters Wide-bandgap SemiconductorQuantum ScienceEngineeringQuantum ComputingQuantum Technology	1990	52
Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires B. E. Maile, A. Forchel, R. Germann, Applied Physics Letters Quantum ScienceElectrical EngineeringPhotonicsEmission Energy ShiftEngineering	1990	33
Nanometer lithography for III–V semiconductor wires using chloromethylated poly-α-methylstyrene resist B. E. Maile, A. Forchel, R. Germann, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Optical MaterialsEngineeringElectron-beam LithographyOptoelectronic DevicesIntegrated Circuits	1988	31
Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content B. E. Maile, A. Forchel, R. Germann, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Optical MaterialsEngineeringSemiconductor WiresSemiconductor MaterialsOptical Characterization	1989	25
Transport and optical properties of semiconductor quantum wires A. Forchel, A. Menschig, B. E. Maile, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsQuantum ScienceElectronic DevicesNanometer StructuresEngineering	1991	24
Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. I: Off-State Jürgen Dickmann, Steffen Schildberg, K. Riepe, Japanese Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductor DeviceSemiconductorsElectronic Devices	1995	20
Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. II: On-State Jürgen Dickmann, Steffen Schildberg, K. Riepe, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1995	19
Time resolved spectroscopy on etched GaAs/GaAlAs-quantum-microstructures G. V. Mayer, B. E. Maile, R. Germann, Superlattices and Microstructures PhysicsApplied PhysicsEtched Gaas/gaalas-quantum-microstructuresCompound SemiconductorSemiconductor Nanostructures	1989	18

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