B. E. Maile

Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires

B. E. Maile, A. Forchel, R. Germann et al. · Applied Physics Letters · 1989 · 90 citations

Categoryquantum Electronics, Optical Materials, Engineering +21

Time-resolved investigations of sidewall recombination in dry-etched GaAs wires

G. V. Mayer, B. E. Maile, R. Germann et al. · Applied Physics Letters · 1990 · 58 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Carrier capture in intermixed quantum wires with sharp lateral confinement

H. Leier, A. Forchel, B. E. Maile et al. · Applied Physics Letters · 1990 · 52 citations

Wide-bandgap Semiconductor, Quantum Science, Engineering +12

Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires

B. E. Maile, A. Forchel, R. Germann et al. · Applied Physics Letters · 1990 · 33 citations

Quantum Science, Electrical Engineering, Photonics +13

Nanometer lithography for III–V semiconductor wires using chloromethylated poly-α-methylstyrene resist

B. E. Maile, A. Forchel, R. Germann et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 31 citations

Optical Materials, Engineering, Electron-beam Lithography +23