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Nanometer lithography for III–V semiconductor wires using chloromethylated poly-α-methylstyrene resist
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1988
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Optical MaterialsEngineeringElectron-beam LithographyOptoelectronic DevicesIntegrated CircuitsNanometer LithographyElectronic DevicesBeam LithographyOptical PropertiesNanometrologyCompound SemiconductorNanolithography MethodNanophotonicsMaterials SciencePhotoluminescenceNanotechnologyPhotonic MaterialsOptoelectronic MaterialsWire WidthElectronic MaterialsMicrofabricationApplied PhysicsNanofabricationOptoelectronicsPhotoluminescence EfficiencyPoly-α-methylstyrene Negative Resist
Chloromethylated poly-α-methylstyrene negative resist was investigated for its suitability in the fabrication of nanometer structures for optical studies. Investigating the photoluminescence efficiency of etched GaAs/AlGaAs wires we find a steep decrease with decreasing wire width, whereas for InGaAs/InP the decrease is much smaller. The difference in the behavior of the material systems can be explained by the effectiveness of surface recombination.