AlGaN/GaN hybrid MOS-HEMT analytical mobility model

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Engineering +17

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

Tohru OKA, Tomohiro Nozawa · IEEE Electron Device Letters · 2008 · 392 citations

Engineering, Electrical Engineering, Materials Science +17

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1994 · 354 citations

Engineering, Electrical Engineering, Materials Science +17

40-W/mm Double Field-plated GaN HEMTs

Yifeng Wu, M. Moore, A. Saxler et al. · 2006 · 339 citations

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Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors

Chang Liu, Eng Fong Chor, L.S. Tan · Applied Physics Letters · 2006 · 212 citations

Engineering, Electrical Engineering, Materials Science +17