First AlGaN/GaN MOSFET with photoanodic gate dielectric

Fabrication and performance of GaN electronic devices

S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering R Reports · 2000 · 498 citations

Engineering, Materials Engineering, Materials Science +12

Ga2O3 films for electronic and optoelectronic applications

M. Passlack, E. Fred Schubert, W. S. Hobson et al. · Journal of Applied Physics · 1995 · 434 citations

Natural Sciences, Materials Science, Physics +17

InGaN-based violet laser diodes

Shuji Nakamura · Semiconductor Science and Technology · 1999 · 231 citations

Engineering, Materials Engineering, Materials Science +17

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

F. Ren, M. Hong, S. N. G. Chu et al. · Applied Physics Letters · 1998 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1998 · 193 citations

Engineering, Materials Engineering, Materials Science +17